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4C512M16MD4V053BIN
4C512M16MD4V053BIN
IC: DRAM memory; 8GbSDRAM; 1866MHz; FBGA200; -40÷95°C
IS42S16400J-5TL
IS42S16400J-5TL
IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 200MHz; 5ns; TSOP54 II; tube
AS4C32M16D2A-25BCN
AS4C32M16D2A-25BCN
IC: DRAM memory; 512MbDRAM; 32Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
4C128M16D3LC-12BIN
4C128M16D3LC-12BIN
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1.35V; 800MHz; 13.75ns
AS4C4M16SA-7TCNTR
AS4C4M16SA-7TCNTR
IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II
AS4C32M16SB-7TIN
AS4C32M16SB-7TIN
IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
43LD16320A-25BLI
43LD16320A-25BLI
IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 400MHz; 18ns; TFBGA134
MT53E512M32D1ZW0IT
MT53E512M32D1ZW0IT
IC: DRAM memory; 16GbDRAM; 2.133GHz; -40÷105°C; 1.1÷1.17V
MT62F1536M64D8CL
MT62F1536M64D8CL
IC: DRAM memory; 96GbDRAM; 3.75GHz; -25÷85°C
MT62F2G32D4DS023WT
MT62F2G32D4DS023WT
IC: DRAM memory; 64GbDRAM; 4.266GHz; -25÷85°C; 1.1V
MT53E512M32D1NP0
MT53E512M32D1NP0
IC: DRAM memory; 16GbDRAM; 2.133GHz; -25÷85°C; 1.1÷1.17V
S27KL0642GABHV020
S27KL0642GABHV020
IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
AS4C16M16SA-6TIN
AS4C16M16SA-6TIN
IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
4C512M32MD4V046BIN
4C512M32MD4V046BIN
IC: DRAM memory; 16GbDRAM; FBGA200; -40÷95°C; in-tray
IS42S32200L-7TLI
IS42S32200L-7TLI
IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
AS4C32M8SA-6TIN
AS4C32M8SA-6TIN
IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 166MHz; 5ns; TSOP54 II
4C64M16MD2A-25BIN
4C64M16MD2A-25BIN
IC: DRAM memory; 1GbDRAM; 64Mx16bit; 1.2÷1.8V; 400MHz; 18ns
AS4C128M16D2A-25BC
AS4C128M16D2A-25BC
IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1.8V; 400MHz; 12.5ns; FBGA84
AS4C16M32MD1-5BIN
AS4C16M32MD1-5BIN
IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
AS4C16M16SA-7TCN
AS4C16M16SA-7TCN
IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 143MHz; 5.4ns; 0÷70°C

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