• Electronics People Since 1965
43R32400E-5BL
43R32400E-5BL
IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 200MHz; 5ns; LFBGA144
MT41K256M8DA125K-0
MT41K256M8DA125K-0
IC: DRAM memory
AS4C16M16SA-6TIN
AS4C16M16SA-6TIN
IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3.3V; 166MHz; 5.4ns; in-tray
AS4C16M16MD1-6BCN
AS4C16M16MD1-6BCN
IC: DRAM memory; 256MbDRAM; 16Mx16bit; 1.7÷1.95V; 166MHz; 6.5ns
AS4C16M16SA-6BIN
AS4C16M16SA-6BIN
IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54
AS4C16M32MD1-5BCN
AS4C16M32MD1-5BCN
IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns
AS4C32M16MD1A-5BCN
AS4C32M16MD1A-5BCN
IC: DRAM memory; 512MbDRAM; 16Mx16bit; 1.7÷1.95V; 200MHz; 6.5ns
AS4C32M16SA-7BIN
AS4C32M16SA-7BIN
IC: DRAM memory; 512MbDRAM; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54
AS4C32M32MD1A-5BIN
AS4C32M32MD1A-5BIN
IC: DRAM memory; 1024MbDRAM; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns
AS4C4M32S-6BIN
AS4C4M32S-6BIN
IC: DRAM memory; 128MbDRAM; 4Mx32bit; 3÷3.6V; 166MHz; 6.5ns
AS4C4M32S-7BCN
AS4C4M32S-7BCN
IC: DRAM memory; 128MbDRAM; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; 0÷70°C
AS4C64M16D1A-6BIN
AS4C64M16D1A-6BIN
IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 2.3÷2.7V; 166MHz; 0.7ns
AS4C64M16MD1A-5BIN
AS4C64M16MD1A-5BIN
IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 1.7÷1.95V; 200MHz; 6.5ns
AS4C64M4SA-7TCN
AS4C64M4SA-7TCN
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
AS4C8M32MD2A-25BCN
AS4C8M32MD2A-25BCN
IC: DRAM memory; 256MbDRAM; 8Mx32bit; 1.7÷1.95V; 400MHz; 5.5ns
IS42S16100H-7TLI
IS42S16100H-7TLI
IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
IS42S32200L-7TL
IS42S32200L-7TL
IC: DRAM memory; 64MbDRAM; 512kx32bitx4; 143MHz; 7ns; TSOP86 II
AS4C64M4SA-6TIN
AS4C64M4SA-6TIN
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
MT41K128M16JT125-4
MT41K128M16JT125-4
IC: DRAM memory
AS4C4M32SA-6TCN
AS4C4M32SA-6TCN
IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
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