- Electronics People Since 1965
- +91-9821745455
- hiren@brilliantelectronics.com
AS4C128M8D1-6TIN
IC: DRAM memory; 1024MbDRAM; 128Mx8bit; 2.3÷2.7V; 166MHz; 700ps
IC: DRAM memory; 1024MbDRAM; 128Mx8bit; 2.3÷2.7V; 166MHz; 700ps
AS4C16M32MD1-5BCN
IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns
IC: DRAM memory; 512MbDRAM; 16Mx32bit; 1.7÷1.95V; 200MHz; 6.5ns
AS4C256M16D4-83BCN
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.2V; 1.2GHz; 14.16ns; FBGA96
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.2V; 1.2GHz; 14.16ns; FBGA96
AS4C2M32S-7BCN
IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 143MHz; 5.4ns; TFBGA90
IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 143MHz; 5.4ns; TFBGA90
AS4C32M16SA-7BIN
IC: DRAM memory; 512MbDRAM; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54
IC: DRAM memory; 512MbDRAM; 32Mx16bit; 3÷3.6V; 143MHz; 6ns; FBGA54
AS4C32M32MD1A-5BIN
IC: DRAM memory; 1024MbDRAM; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns
IC: DRAM memory; 1024MbDRAM; 32Mx32bit; 1.7÷1.95V; 200MHz; 6ns
AS4C4M32S-7BCN
IC: DRAM memory; 128MbDRAM; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; 0÷70°C
IC: DRAM memory; 128MbDRAM; 4Mx32bit; 3÷3.6V; 143MHz; 6.5ns; 0÷70°C
AS4C512M8D4-83BCN
IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.2V; 1.2GHz; 14.16ns; FBGA78
MT41K128M16JT125-5
IC: DRAM memory; 1.283÷1.45V; 800MHz; 13.8ns; FBGA96; -40÷125°C
IC: DRAM memory; 1.283÷1.45V; 800MHz; 13.8ns; FBGA96; -40÷125°C
MT41K128M16JT125-9
IC: DRAM memory; 1.283÷1.45V; 800MHz; 13.8ns; FBGA96; 0÷95°C
IC: DRAM memory; 1.283÷1.45V; 800MHz; 13.8ns; FBGA96; 0÷95°C
MT41K256M16TW107-4
IC: DRAM memory; 256Mx16bit; 1.35V; 933MHz; FBGA96; -40÷95°C
IC: DRAM memory; 256Mx16bit; 1.35V; 933MHz; FBGA96; -40÷95°C
MT41K256M16TW107-6
IC: DRAM memory; 256Mx16bit; 1.35V; 933MHz; FBGA96; 0÷95°C
IC: DRAM memory; 256Mx16bit; 1.35V; 933MHz; FBGA96; 0÷95°C
MT48LC4M16A2P6AI-0
IC: DRAM memory; 4Mx16bit; 3.3V; 167MHz; 5.4ns; TSOP54 II; -40÷85°C
IC: DRAM memory; 4Mx16bit; 3.3V; 167MHz; 5.4ns; TSOP54 II; -40÷85°C
AS4C4M16SA-7TCNTR
IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II
IC: DRAM memory; 64MbDRAM; 4Mx16bit; 3.3V; 143MHz; 7ns; TSOP54 II
AS4C16M16SA-6BIN
IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54
IC: DRAM memory; 256MbDRAM; 16Mx16bit; 3÷3.6V; 166MHz; 6ns; TFBGA54
AS4C8M16SA-6BIN
IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 3.3V; 166MHz; 5.4ns; FBGA54
MT41K64M16TW107J-0
IC: DRAM memory; 1.35V; 933MHz; FBGA96; 0÷95°C; parallel
IC: DRAM memory; 1.35V; 933MHz; FBGA96; 0÷95°C; parallel
MT47H128M16RT25E-0
IC: DRAM memory; 128Mx16bit; 1.8V; 2.5ns; FBGA84; 0÷85°C; parallel
IC: DRAM memory; 128Mx16bit; 1.8V; 2.5ns; FBGA84; 0÷85°C; parallel
AS4C2M32S-6BIN
IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.4ns; TFBGA90
IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.4ns; TFBGA90
MT41K128M16JT125-7
IC: DRAM memory; 1.283÷1.45V; 800MHz; 13.8ns; FBGA96; -40÷95°C
IC: DRAM memory; 1.283÷1.45V; 800MHz; 13.8ns; FBGA96; -40÷95°C
CATEGORY
Unclassified
