- Electronics People Since 1965
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4C64M32MD1-5BINTR
IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
4C64M32MD1A-5BINTR
IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; FBGA90; -40÷85°C
IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; FBGA90; -40÷85°C
4C512M8D3LC-12BAN
IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
IC: DRAM memory; 4GbDRAM; 512Mx8bit; 1.35V; 800MHz; 13.75ns; FBGA78
AS4C512M16D4A62BCN
IC: DRAM memory; 8GbSDRAM; 512Mx16bit; 1.6GHz; FBGA96; 0÷95°C
IC: DRAM memory; 8GbSDRAM; 512Mx16bit; 1.6GHz; FBGA96; 0÷95°C
AS4C512M16D4A62BIN
IC: DRAM memory; 8GbSDRAM; 512Mx16bit; 1.6GHz; FBGA96; -40÷95°C
IC: DRAM memory; 8GbSDRAM; 512Mx16bit; 1.6GHz; FBGA96; -40÷95°C
AS4C64M32MD1A-5BIN
IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; FBGA90; -40÷85°C
IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; FBGA90; -40÷85°C
AS4C64M32MD4062BAN
IC: DRAM memory; 2GbSDRAM; 64Mx32bit; 1.6GHz; FBGA200; -40÷105°C
IC: DRAM memory; 2GbSDRAM; 64Mx32bit; 1.6GHz; FBGA200; -40÷105°C
AS4C64M4SA-6TINTR
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 166MHz; 5ns; -40÷85°C
AS4C64M4SA-7TCN
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
AS4C64M4SA-7TCNTR
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 3.3V; 143MHz; 5.4ns; 0÷70°C
AS4C64M8D1-5TCN
IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; TSOP66 II
IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; TSOP66 II
4C64M8D3L-12BINTR
IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.35V; 800MHz; 13.75ns; reel
IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.35V; 800MHz; 13.75ns; reel
AS4C32M8D1-5TCN
IC: DRAM memory; 256MbDRAM; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II
IC: DRAM memory; 256MbDRAM; 32Mx8bit; 2.5V; 200MHz; 15ns; TSOP66 II
AS4C32M8SA-7TCNTR
IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
IC: DRAM memory; 256MbDRAM; 32Mx8bit; 3.3V; 143MHz; 5.4ns; 0÷70°C
4C512M16MD4V053BIN
IC: DRAM memory; 8GbSDRAM; 1866MHz; FBGA200; -40÷95°C
IC: DRAM memory; 8GbSDRAM; 1866MHz; FBGA200; -40÷95°C
4C512M32MD4V053BIN
IC: DRAM memory; 16GbSDRAM; 1866MHz; FBGA200; -40÷95°C
IC: DRAM memory; 16GbSDRAM; 1866MHz; FBGA200; -40÷95°C
AS4C32M16SB-7BIN
IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 3.3V; 143MHz; 5.4ns
AS4C2M32SA-6TINTR
IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.5ns; TSOP86
IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.5ns; TSOP86
AS4C2M32SA-6TCNTR
IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.5ns; TSOP86
IC: DRAM memory; 64MbDRAM; 2Mx32bit; 3.3V; 166MHz; 5.5ns; TSOP86
AS4C1M16S-7TCNTR
IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP50 II
IC: DRAM memory; 16MbDRAM; 1Mx16bit; 3.3V; 143MHz; 5.4ns; TSOP50 II
CATEGORY
Unclassified
