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MT53E512M32D1NP0T
MT53E512M32D1NP0T
IC: DRAM memory; 16GbDRAM; FBGA200
MT53E768M32D4DT0AI
MT53E768M32D4DT0AI
IC: DRAM memory; 24GbDRAM; 2.133GHz; -40÷95°C; 1.1V
MT41K512M8DA107IIP
MT41K512M8DA107IIP
IC: DRAM memory; 4GbDRAM; 512Mx8bit; 933MHz; FBGA78; -40÷95°C
MT41K256M8DA125IIK
MT41K256M8DA125IIK
IC: DRAM memory; 2GbDRAM; 256Mx8bit; 800MHz; FBGA78; -40÷95°C
MT53E512M32D1ZW0BW
MT53E512M32D1ZW0BW
IC: DRAM memory; 16GbDRAM; 2.133GHz; -40÷125°C; 1.1÷1.17V
MT53E512M32D1ZW0BI
MT53E512M32D1ZW0BI
IC: DRAM memory; 16GbDRAM; 2.133GHz; -40÷95°C; 1.1÷1.17V
JOYMT41K128M16JT
JOYMT41K128M16JT
IC: DRAM memory
MT40A1G8SA062ER
MT40A1G8SA062ER
IC: DRAM memory; 8GbDRAM; 1Gx8bit; 1.6GHz; FBGA78; 0÷95°C
IS42S32200N-6BLI
IS42S32200N-6BLI
IC: DRAM memory; 64MbDRAM; 2Mx32bit; 166MHz; TFBGA90; -40÷85°C
AS4C64M16D1-6TCN
AS4C64M16D1-6TCN
IC: DRAM memory; 1GbDRAM; 64Mx16bit; 2.5V; 166MHz; 18ns; TSOP66
AS4C64M16D1A-6BIN
AS4C64M16D1A-6BIN
IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 2.3÷2.7V; 166MHz; 0.7ns
AS4C64M16D2B-25BCN
AS4C64M16D2B-25BCN
IC: DRAM memory; 1024MbDRAM; 64Mx16bit; 1.7÷1.9V; 400MHz; 400ps
AS4C64M32MD1-5BCN
AS4C64M32MD1-5BCN
IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
AS4C64M32MD1-5BIN
AS4C64M32MD1-5BIN
IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.8V; 200MHz; 15ns; FBGA90
AS4C64M8D1-5BCN
AS4C64M8D1-5BCN
IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; 0÷70°C
AS4C64M8D1-5BIN
AS4C64M8D1-5BIN
IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; FBGA60; in-tray
AS4C64M8D1-5TIN
AS4C64M8D1-5TIN
IC: DRAM memory; 512MbDRAM; 64Mx8bit; 2.5V; 200MHz; TSOP66 II
AS4C64M8D2-25BAN
AS4C64M8D2-25BAN
IC: DRAM memory; 512MbDRAM; 64Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
AS4C4M32SA-6TINTR
AS4C4M32SA-6TINTR
IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86
AS4C4M32SA-6TCNTR
AS4C4M32SA-6TCNTR
IC: DRAM memory; 128MbDRAM; 1Mx32bitx4; 3.3V; 166MHz; 5.4ns; TSOP86

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