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AS4C256M16D4-83BIN
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.2V; 1.2GHz; 14.16ns; FBGA96
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.2V; 1.2GHz; 14.16ns; FBGA96
42VM32800K-6BLI
IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
42S32800J-7BLI-TR
IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 143MHz; 7ns; TFBGA90
IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 143MHz; 7ns; TFBGA90
4C128M8D2A-25BCNTR
IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
IC: DRAM memory; 1GbDRAM; 128Mx8bit; 1.8V; 400MHz; 12.5ns; FBGA60
4C256M16D3C-12BCN
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.5V; 800MHz; 13.75ns; FBGA96
IC: DRAM memory; 4GbDRAM; 256Mx16bit; 1.5V; 800MHz; 13.75ns; FBGA96
42SM16160K-6BLI
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA54
42S32800J-6BL
IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
IS42S16400J-7TL-TR
IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 0÷70°C
42VM32800K-75BLI
IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
42S32800J-75ETL
IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TSOP86 II
IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TSOP86 II
43DR16160B-25DBLI
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 400MHz; 12.5ns; TWBGA84
4C64M32MD2A-25BINT
IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
IC: DRAM memory; 2GbDRAM; 64Mx32bit; 1.2÷1.8V; 400MHz; 18ns; reel
AS4C16M32SC-7TINTR
IC: DRAM memory; 512MbDRAM; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; reel
IC: DRAM memory; 512MbDRAM; 16Mx32bit; 3÷3.6V; 133MHz; 5.4ns; reel
MT41J128M16JT125-0
IC: DRAM memory; 128Mx16bit; 1.5V; 800MHz; 13.8ns; FBGA96; 0÷95°C
IC: DRAM memory; 128Mx16bit; 1.5V; 800MHz; 13.8ns; FBGA96; 0÷95°C
MT41K128M16JT107-0
IC: DRAM memory; 1.283÷1.45V; 933MHz; FBGA96; -40÷105°C; parallel
IC: DRAM memory; 1.283÷1.45V; 933MHz; FBGA96; -40÷105°C; parallel
MT41K128M16JT107-1
IC: DRAM memory; 128Mx16bit; 1.35V; 933MHz; FBGA96; -40÷95°C
IC: DRAM memory; 128Mx16bit; 1.35V; 933MHz; FBGA96; -40÷95°C
MT41K128M16JT125-2
IC: DRAM memory; 128Mx16bit; 1.35V; 800MHz; 13.8ns; FBGA96
IC: DRAM memory; 128Mx16bit; 1.35V; 800MHz; 13.8ns; FBGA96
MT41K128M16JT125-5
IC: DRAM memory; 1.283÷1.45V; 800MHz; 13.8ns; FBGA96; -40÷125°C
IC: DRAM memory; 1.283÷1.45V; 800MHz; 13.8ns; FBGA96; -40÷125°C
MT41K256M16TW107-4
IC: DRAM memory; 256Mx16bit; 1.35V; 933MHz; FBGA96; -40÷95°C
IC: DRAM memory; 256Mx16bit; 1.35V; 933MHz; FBGA96; -40÷95°C
MT41K256M16TW107-6
IC: DRAM memory; 256Mx16bit; 1.35V; 933MHz; FBGA96; 0÷95°C
IC: DRAM memory; 256Mx16bit; 1.35V; 933MHz; FBGA96; 0÷95°C
CATEGORY
Unclassified
